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Routes to tin chalcogenide materials as thin films or nanoparticles: a potentially important class of semiconductor for sustainable solar energy conversion

机译:作为薄膜或纳米颗粒的锡硫属化物材料的路线:可持续太阳能转换的潜在重要半导体类别

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摘要

Thin films of tin chalcogenides may find use in photovoltaic devices, and nanocrystals of such materials are attractive due to their tuneable band gaps and potential in photovoltaic, photonic and optoelectronic applications. Tin(II) sulfide (SnS) is of particular interest due to its band gap of 1.4 eV, which is similar to that of silicon (1.1 eV). This review seeks to provide an overview of the chemical routes currently known for the synthesis of tin chalcogenides as thin films or in nanocrystalline form, as well as exploring routes to copper zinc tin sulfide (CZTS) and mesoporous tin chalcogenides.
机译:硫属锡化物的薄膜可能会用于光伏设备,此类材料的纳米晶体由于其可调节的带隙以及在光伏,光子和光电应用中的潜力而具有吸引力。硫化锡(SnS)的带隙为1.4 eV,这与硅的带隙相似(1.1 eV),因此特别受关注。这篇综述旨在概述目前已知以薄膜或纳米晶形式合成硫属硫属元素化物的化学路线,以及探索生成硫化铜锌锡(CZTS)和介孔锡硫属元素化物的路线。

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